MSE PRO 6 inch N-type SiC Epitaxial Layer on SiC Substrates, Epi Thickness: 11 um

2 in Silicon Carbide Wafers 4H N-type SiC Substrates

4 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates (HPSI)

MSE PRO 4" Silicon/Silicon Dioxide (Si/SiO₂) Dry Thermal Oxide Silicon Wafer, Prime Grade

6 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating

6 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates (HPSI)

6 inch N-type SiC Epitaxial Wafers on SiC Substrates