MSE PRO 100 mm N Type (P-doped) Prime Grade Silicon Wafer <100>, SSP, 0.001-0.01 ohm-cm

2 in Silicon Carbide Wafers 4H N-type SiC Substrates

4 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates (HPSI)

MSE PRO 4" Silicon/Silicon Dioxide (Si/SiO₂) Dry Thermal Oxide Silicon Wafer, Prime Grade

6 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating

6 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates (HPSI)

6 inch N-type SiC Epitaxial Wafers on SiC Substrates